DMN2300U-7【PDF 2/7 页】MOSFET N-CH 20V 1.24A SOT23

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A Product Line of

Diodes Incorporated

DMN2300U

Maximum Ratings @T A = 25°C unless otherwise specified

Drain-Source Voltage

Gate-Source Voltage

Characteristic

Symbol

V DSS

V GSS

Value

20

±8

Unit

V

V

Continuous Drain Current

Pulsed Drain Current (Note 6)

Steady

State

T A = 25°C (Note 5)

T A = 85°C (Note 5)

T A = 25°C (Note 4)

I D

I DM

1.40

1.01

1.24

11

A

A

Thermal Characteristics @T A = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

(Note 4)

(Note 5)

(Note 4)

(Note 5)

P D

R θ JA

T J , T STG

0.43

0.55

288

228

-55 to +150

W

W

°C/W

°C/W

°C

Notes:

4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper

6. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.

Thermal Characteristics

100

100

90

80

Single Pulse

Rthja = 220C/W

Rthja(t) = Rthja*r(t)

T J - T A = P*Rthja (t)

10

I D (A) @

P W = 1ms

I D (A) @

P W = 100μs

70

I D (A) @

60

50

1

P W = 10ms

I D (A) @ DC

40

30

20

0.1

0.01

T J(MAX) = 150°C

I D (A) @

P W = 10s

I D (A) @

P W = 1s

I D (A) @

P W = 100ms

I D (A) @

P W = 10μs

10

T A = 25°C

Single Pulse

0

0.00001

0.001

0.1

10

1000

0.001

0.01

0.1 1 10

100

T1, PULSE DURATION SECTION (sec)

Fig. 1 Single Maximum Power Dissipation

V DS , DRAIN-SOURCE VOLTAGE

Fig. 2 SOA, Safe Operation Area

DMN2300U

Datasheet number: DS35309 Rev. 2 - 2

2 of 7

www.diodes.com

July 2011

? Diodes Incorporated

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